MMBT9014 for switching and af amplifier applications as complementary types the pnp transistor mmbt9015 is recommended. absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage v cbo 50 v collector emitter voltage v ceo 45 v emitter base voltage v ebo 5 v collector current i c 100 ma power dissipation p tot 200 mw junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. max. unit dc current gain at v ce = 5 v, i c = 1 ma MMBT9014b MMBT9014c MMBT9014d h fe h fe h fe 110 200 420 220 450 800 - - - collector cutoff current at v cb = 50 v i cbo - 50 na emitter cutoff current at v eb = 5 v i ebo - 50 na collector base breakdown voltage at i c = 100 a v (br)cbo 50 - v collector emitter breakdown voltage at i c = 1 ma v (br)ceo 45 - v emitter base breakdown voltage at i e = 100 a v (br)ebo 5 - v collector emitter saturation voltage at i c = 100 ma, i b = 5 ma v ce(sat) - 0.6 v base emitter saturation voltage at i c = 100 ma, i b = 5 ma v be(sat) - 1 v gain bandwidth product at v ce = 5 v, i c = 10 ma f t 100 - mhz output capacitance at v cb = 10 v, f = 1 mhz c ob - 6 pf noise figure at v ce = 5 v, i c = 200 a, f = 1 khz, r g = 2 k ? nf - 10 db sot-23 plastic package smd type smd type product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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